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Silicon carbide single crystal furnace system TDL85P
Number: SN20150801141615675
Category: Silicon Carbide Crystal Growth Furnace
  • product description
  • Specifications
  • service support

    Equipment use
    Mainly used in the semiconductor and LED industries. The medium frequency induction heating method and the physical vapor transmission method are used to grow high-quality optical crystals.


    Equipment composition
    The system consists of a deposition vacuum chamber, an induction heating table system, a sample introduction room, an automatic sample feeding system, a gas path system, an air extraction system, an installation machine, a vacuum measurement and electrical control system, etc.

    Technical index

    model  

    TDL85P  

    Vacuum degree in the furnace

    Ultimate vacuum

    9.0× 10 - 5 Pa 9.0 × 10-5 Pa

    When the stretching mechanism is in motion

    1.0× 10 - 4 Pa 1.0 × 10-4 Pa

    System leak rate

    Pa Vacuum level ≤5 Pa after stopping pump for 24 hours

    Furnace body

    Deposition chamber

    结构 ,尺寸Φ900×1000 mm Cylindrical vertical structure , size Φ900 × 1000 mm

    Sample room

    Ф 300×300mm Size Ф 300 × 300mm

    Automatic sample delivery mechanism

    Slow gear speed range

    0.06 ~ 6㎜ / h

    档速率 范围 Fast gear range

    ≥50㎜ / min

    range of rotation

    0 ~ 30rpm

    Effective travel

    500㎜

    Total rated power

    35KW

    Circulating water consumption

    3 /h 3m 3 / h

    Vacuum configuration

    Molecular pump, roots pump, mechanical pump, flapper valve

    Area

    3 (含电源) 2700 × 1200 × 3000mm 3 (including power supply)


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