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Silicon carbide single crystal furnace system TDL60P
Number: SN20150801142150212
Category: Silicon Carbide Crystal Growth Furnace
  • product description
  • Specifications
  • service support

    Equipment use
    Mainly used in the semiconductor and LED industries. Medium frequency induction heating method and physical vapor transmission method are used to grow high-quality optical crystals.


    Equipment composition
    This system adopts single-chamber vertical double-layer water-cooled stainless steel structure. It consists of furnace, vacuum acquisition and measurement system, seed rod pulling system, crucible rod pulling system, induction heating system, and electric control system.

    Technical index

    model

    TDL60P

    Vacuum degree in the furnace

    Ultimate vacuum

    10 - 5 Pa 6.6 × 10-5 Pa

    System pumping speed

    0 分钟内真空度 <2×10 -3 Pa( 短时间 暴露大气并充入干燥氮气 开始抽气 Vacuum degree within 60 minutes <2 × 10 -3 Pa

    System leak rate

    Pa Vacuum level ≤10 Pa after stopping pump for 12 hours

    Furnace body

    Main hearth

    Size Φ600 × 800 mm

    Deputy hearth

    Ф 300×400mm Size Ф 300 × 400mm

    Rotating speed

    0 ~ 30rpm

    Lifting speed continuously adjustable range

    0.06 ~ 6㎜ / h

    Fast lifting speed continuously adjustable

    ≥50㎜ / min

    Effective travel

    390㎜

    Crucible transmission mechanism

    Rotating speed

    0 ~ 30rpm

    Speed range

    0.06 ~ 6㎜ / h

    Fast lifting speed continuously adjustable

    ≥50㎜ / min

    Effective travel

    560㎜

    Total rated power

    55KW

    Circulating water consumption

    3 /h 3m 3 / h

    Vacuum configuration

    Molecular pump, mechanical pump, flapper valve

    Area

    Host

    ×2500mm 2 1500 × 2500mm 2

    Electric control cabinet

    ×700mm 2 (一个) 700 × 700mm 2 (one)

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