This equipment uses plasma enhanced chemical vapor deposition technology to deposit thin films such as silicon nitride, amorphous silicon and microcrystalline silicon on different substrate materials such as optical glass, silicon, quartz, and stainless steel to prepare amorphous silicon and microcrystalline Silicon thin film solar cell device. It can be widely used in scientific research and small batch preparation of thin film materials in universities and research institutes.
The multi-chamber CVD structure is connected by a linear structure with two inlet and outlet film chambers and three independent PECVD reaction vacuum chambers. The workpiece is transported to each vacuum chamber for processing by a transfer mechanism, and the vacuum chambers are connected by a flapper valve. The system is mainly composed of vacuum chamber, vacuum acquisition system, RF and VHF power supply, substrate heating temperature control system, gas circuit system, exhaust gas processing system, transmission system and other parts.